Monocrystalline company

Monocrystalline Silicon Wafer

Grown by Czochralski method
Diameter: up to 485mm
Dopant B (Borum)
Type of conductivity: P
Orientation: 100
Resistivity: up to 10000
Notch-yes Notch Location: 110
Notch size: 2,3 mm
shape of the Notch: V
Wafer thickness: 775±25 microns Type of marking: laser Marking location Reverse side Edge Profile: SEMI T/4 S1/S2 polishing- yes
Total thickness change across the wafers (TTV), microns < 3
WARP: <40 microns The number of particles on a surface larger
than 0.12 microns: <40
Surface content of Aluminum, E10AT/CM2: 5

Product Description

Monocrystalline Si is produced by the following process: Quartz sand - metallurgical grade silicon - purification and refining - deposited polycrystalline silicon ingots - monocrystalline silicon - wafer cutting. The main application of monocrystalline Si is to be applied as the semiconductor materials and the field of solar energy and solar heating, etc.

Main Advantages:

Single inspection is available

MCZ (Superconducting Magnetic Czochralski) growth method
Maximum diameter of 485mm
Zero dislocation defects
High growth yield
Impurity content is extremely low



Typical applications:

Semiconductor materials

Solar energy

Solar heating


Material Properties

MaterialSi
Chemical FormulaSi
Density2.33g/cm³
Purity99.999%
Dimension tolerance±0.1mm
Surface3.2Ra
ColorLight grey

Grown by Czochralski method
Diameter: up to 485mm
Dopant B (Borum)
Type of conductivity: P
Orientation: 100
Resistivity: up to 10000
Notch-yes Notch Location: 110
Notch size: 2,3 mm
shape of the Notch: V
Wafer thickness: 775±25 microns Type of marking: laser Marking location Reverse side Edge Profile: SEMI T/4

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