製品説明
LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetic thin films. Its dielectric properties are suitable for low loss microwave and dielectric resonance applications.
主な利点:
Small dielectric constant
Low dielectric loss
Good lattice matching
Small thermal expansion coefficient
Good chemical stability; wide energy gap
Large specific surface area
Good thermal stability
代表的なアプリケーション：
High temperature superconducting thin film epitaxial substrate; Macro-magnetic thin film epitaxial substrate; Microwave amplification and dielectric resonance
材料特性
| 化学式 | LaAlO3 |
| Growth Method | Czochralski |
| Crystal System | Hexagonal (room temperature) |
| 格子定数 | Hexagonal a = 5.357Å c = 13.22 Å |
| Hardness | 6.5 Mohs |
| 密度 | 6.52g/cm3 |
| 融点 | 融点 |
| Thermal Expansion | 10×10-6/℃ |
| Loss Tangent (10ghz) | ～3×10-4@300K,～0.6×10-4@77K |
技術的パラメータ
| Dimensions | Max Diameter 76.2mm（3 inch） |
| Thickness | 0.5mm other thickness available |
| Polishing | Single or double |
| Orientation | <100><110><111> |
| Ra | Ra≤5Å（5µm×5µm） |
| Orientation Tolerance | ±0.2° |
| Orientation Flat | 2°（within 1° for special requirement） |
| Angle of Crystalline | Special size and orientation are available upon request |
注: 上記のパラメータは参考用です。具体的な要件については、当社の営業担当者にお問い合わせください。
