LaAlO3
Keywords:
LaAlO3
Category:
- Details
- Characteristics
- Parameters
- Application
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- Commodity name: LaAlO3
LaAlO3 crystal is the substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetoresistance thin films because of its good lattice matching with a variety of perovskite structure materials.
LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetic thin films. Its dielectric properties are suitable for low loss microwave and dielectric resonance applications.
Main Advantages:
Small dielectric constant
Low dielectric loss
Good lattice matching
Small thermal expansion coefficient
Good chemical stability; wide energy gap
Large specific surface area
Good thermal stability
Typical applications:
High temperature superconducting thin film epitaxial substrate; Macro-magnetic thin film epitaxial substrate; Microwave amplification and dielectric resonance
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Chemical Formula LaAlO3 Growth Method Czochralski Crystal System Hexagonal (room temperature) Lattice Constant Hexagonal a = 5.357Å c = 13.22 Å Hardness 6.5 Mohs Density 6.52g/cm3 Melting Point Melting Point Thermal Expansion 10×10-6/℃ Loss Tangent (10ghz) ～3×10-4@300K,～0.6×10-4@77K -
Dimensions Max Diameter 76.2mm（3 inch） Thickness 0.5mm other thickness available Polishing Single or double Orientation <100><110><111> Ra Ra≤5Å（5µm×5µm） Orientation Tolerance ±0.2° Orientation Flat 2°（within 1° for special requirement） Angle of Crystalline Special size and orientation are available upon request
Professional R&D, design, production and sales of crystal materials and their application devices
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