China LaAlO3 crystal company
LaAlO3 crystal factory
LaAlO3 crystal company

LaAlO3

LaAlO3 crystal is the substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetoresistance thin films because of its good lattice matching with a variety of perovskite structure materials.

Product Description

LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetic thin films. Its dielectric properties are suitable for low loss microwave and dielectric resonance applications.

Main Advantages:

Small dielectric constant

Low dielectric loss

Good lattice matching

Small thermal expansion coefficient

Good chemical stability; wide energy gap

Large specific surface area

Good thermal stability

Typical applications:

High temperature superconducting thin film epitaxial substrate; Macro-magnetic thin film epitaxial substrate; Microwave amplification and dielectric resonance



Material Properties

Chemical Formula LaAlO3
Growth Method Czochralski
Crystal System Hexagonal (room temperature)
Lattice Constant Hexagonal a = 5.357Å c = 13.22 Å
Hardness 6.5 Mohs
Density 6.52g/cm3
Melting Point Melting Point
Thermal Expansion 10×10-6/℃
Loss Tangent (10ghz) ~3×10-4@300K,~0.6×10-4@77K



Technical Parameter

Dimensions Max Diameter 76.2mm(3 inch)
Thickness 0.5mm other thickness available
Polishing Single or double
Orientation <100><110><111>
Ra Ra≤5Å(5µm×5µm)
Orientation Tolerance  ±0.2°
Orientation Flat 2°(within 1° for special requirement)
Angle of Crystalline Special size and orientation are available upon request

Note: Above parameters for reference only, please contact our sales Rep. for your specific requirement.

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