Description du produit
LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetic thin films. Its dielectric properties are suitable for low loss microwave and dielectric resonance applications.
Main Advantages:
Small dielectric constant
Low dielectric loss
Good lattice matching
Small thermal expansion coefficient
Good chemical stability; wide energy gap
Large specific surface area
Good thermal stability
Typical applications:
High temperature superconducting thin film epitaxial substrate; Macro-magnetic thin film epitaxial substrate; Microwave amplification and dielectric resonance
Propriétés matérielles
| Chemical Formula | LaAlO3 |
| Growth Method | Czochralski |
| Crystal System | Hexagonal (room temperature) |
| Constante de réseau | Hexagonal a = 5.357Å c = 13.22 Å |
| Hardness | 6.5 Mohs |
| Densité | 6.52g/cm3 |
| Point de fusion | Point de fusion |
| Thermal Expansion | 10×10-6/℃ |
| Loss Tangent (10ghz) | ～3×10-4@300K,～0.6×10-4@77K |
Paramètre technique
| Dimensions | Max Diameter 76.2mm（3 inch） |
| Thickness | 0.5mm other thickness available |
| Polishing | Single or double |
| Orientation | <100><110><111> |
| Ra | Ra≤5Å（5µm×5µm） |
| Orientation Tolerance | ±0.2° |
| Orientation Flat | 2°（within 1° for special requirement） |
| Angle of Crystalline | Special size and orientation are available upon request |
Remarque : Paramètres ci-dessus à titre de référence uniquement, veuillez contacter notre représentant commercial pour vos besoins spécifiques.
