LGS electro-optical Q-switch
Keywords:
LGS electro-optical Q-switch
Category:
- Details
- Characteristics
- Parameters
- Application
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- Commodity name: LGS electro-optical Q-switch
This is a new type of electro-optical Q-switch designed with LGS (Lannum Gallium Silicate) crystal. The LGS series Q-switch is a practical electro-optical device that can be used for medium output energy lasers and partially replaces series Q-switches such as DKDP, RTP and LiNbO3.
Photoelectric Q-switch designed with LGS crystal. LGS crystal has a high damage threshold (about 9 times that of LN), excellent photoelectric coefficient and excellent temperature stability. LGS (LG-EO-Q) series Q-switch (Pockels cell) is a practical optoelectronic device that can be used for medium output energy lasers and can partially replace DKDP, RTP and LiNbO3 series Q-switches.
Main features
Wavelength can reach 3.2μm
Transmission wavefront distortion
Damage threshold >900MW/cm2
LGS can partially replace DKDP, RTP and LiNbO3 series Q switches.
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Chemical formula
La3Ga5SiQ14
Lattice parameters
Trigonal crystal a=b=7.453A., c=6.293A.
Density
5.75g/cm3
Melting point
1470℃
Transmission band
242~3200nm
Refractive index
1.89
Electro-optic coefficient
Y41=1.8pm/V, Y11=2.3pm/V
Conductivity
1.7×1010 Ω.cm
Deliquescent
Non-deliquescent
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Crystal size
2 x 2~8 x 8 mm
Case size
20-35 mm
Clear aperture
8mm-20mm
Extinction ratio
＞350:1
Transmission distortion
λ/6 @ 633nm
Overall transmittance
＞98% @ 1064nm
Isolation between electrodes
<1
Smoothness
20/10 (40/20 after film)
Coating AR/AR @ 1064nm (R<0.2%)
Damage threshold
900MW/cm2 10ns 10Hz 1064nm
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